Motlan, E.M. Goldys, K.S.A. Butcher, T.L. Tansley
Cathodoluminesence (CL) studies were performed for GaSb self-assembled quantum dots grown by atmospheric pressure metalorganic chemical vapour deposition on GaAs substrates. The evolution of quantum dot size and density was examined for samples grown for different periods. The CL peaks shifted to higher energies from 0.95 to 1.05 eV as the dot growth time increased from 3 to 7 s. This trend indicates a significant size quantisation effect for partially relaxed structures. © 2003 Elsevier Science B.V. All rights reserved.
Semiconduct. Sci./Technol. Labs., Physics Department, Macquarie University, Sydney, NSW 2109, Australia; Physics Department, Faculty of Mathematics and Science, State University of Medan, Medan 20221, Indonesia
