Krystyna Drozdowicz-Tomsia, Ewa M. Goldys, Motlan Motlan, Hadi Zareie, Matthew R. Phillips
Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer and QDs are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. The highest separation of 270 meV is achieved for GaAs confinement layers grown at 540 °C. © 2005 American Institute of Physics.
Physics Department, Division of Information and Communication Sciences, Macquarie University, Sydney, NSW 2109, Australia; Physics Department, Faculty of Mathematics and Natural Science, State University of Medan, Indonesia; Microstructural Analysis Unit, University of Technology, Sydney, Broadway, NSW 2007, P.O. Box 123, Australia
