Effect of growth temperature of the confinement layer on cathodoluminescence properties of GaSb/GaAs quantum dot multilayer structures

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Krystyna Drozdowicz-Tomsia, Ewa M. Goldys, Motlan

2005 Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD Conference paper Cited by 1

Abstract

Multilayer GaSb/GaAs quantum dot (QD) structures grown by atmospheric pressure metalorganic chemical deposition (MOCVD) on semi-insulating (SI) GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer (WL) and quantum dots (QD) are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers. © 2005 IEEE.

Affiliations

Physics Department, Division of Information and Communication Sciences, Macquarie University, Sydney, NSW 2109, Australia; Physics Department, Faculty of Mathematics and Natural Science, State University of Medan, Indonesia

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